Xps peak tutorials
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The Al was deposited at a rate of 3.5 nm/sec to achieve a thickness of 150 Å. The CVD Si 3N 4 dielectric layer on the substrate is referred to as the interference layer (IL) and aids in the quantification of oxide growth on Al via ellipsometry. In studying aluminum films, the wafer utilized was purchased with a nominal 300 nm of CVD Si 3N 4. The sample substrates were cleaved from Si (100) wafers. The aluminum oxide which forms, though only 3.5-5 nm thick, effectively blocks aluminum’s high reflectance above about 9 eV (10 −4 Pa. Even under high-vacuum conditions, oxidation and loss of vacuum ultraviolet (VUV) reflectance are observed. Unfortunately, aluminum begins oxidizing immediately upon air exposure. IntroductionĪluminum is the only material that can provide broad-band IR-optical-UV and far ultraviolet (FUV) reflectance. © 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreementġ April 2021: A typographical correction was made to the author affiliations. This method of employing SE coupled with XPS can be extendable to the study of other metal/overlayer combinations. The slope depends only on MgF 2 thickness, decreasing monotonically with increasing MgF 2 thickness. An empirical formula fits time-dependent data for aluminum surfaces protected by MgF 2 as a function of MgF 2 layer thickness: aluminum-oxide thickness = k SE*log(t)+b SE. Oxide growth is computed from relative XPS peak areas as corrected for electron attenuation through the MgF 2 overlayer. Changes in chemical state from Al metal to Al oxide were directly observed. Aluminum oxidation changes under the fluoride layer were quantitatively verified with XPS. 2s over a period of several hours after the evaporated Al + MgF 2 bilayer is removed from the deposition chamber.
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Dynamic SE tracks the extent of oxide growth every ca. In this study, we present, for the first time, combined X-ray photoelectron spectroscopy (XPS) and spectroscopic ellipsometric (SE) studies of aluminum oxidation as a function of MgF 2 overlayer thickness (thickness 0-5 nm). To maintain high, broad-band reflectance, thin transparent fluoride layers, such as MgF 2, are used to protect aluminum mirrors against oxidation.
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